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參數(shù)資料
| 型號： | SST32HF164-70-4E-EK |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | 存儲器 |
| 英文描述： | Multi-Purpose Flash (MPF) + SRAM ComboMemory |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP1-48 |
| 文件頁數(shù)： | 9/28頁 |
| 文件大?。?/td> | 342K |
| 代理商： | SST32HF164-70-4E-EK |
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Data Sheet
Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF802 / SST32HF162 / SST32HF164
9
2001 Silicon Storage Technology, Inc.
S71171-05-000
8/01
520
TABLE
5: DC O
PERATING
C
HARACTERISTICS
(V
DD
= V
DDF
AND
V
DDS
= 2.7-3.3V)
Symbol
I
DD
Parameter
Power Supply Current
Limits
Max
Test Conditions
Address input = V
IL
/V
IH
, at f=1/T
RC
Min,
V
DD
=V
DD
Max, all DQs open
OE#=V
IL
, WE#=V
IH
BEF#=V
IL
, BES#=V
IH
BEF#=V
IH
, BES#=V
IL
BEF#=V
IH
, BES#=V
IL
WE#=V
IL
BEF#=V
IL
, BES#=V
IH,
OE#=V
IH
BEF#=V
IH
, BES#=V
IL
V
DD
= V
DD
Max, BEF#=BES#=V
IHC
Min
Units
Read
Flash
SRAM
20
20
45
mA
mA
mA
Concurrent Operation
Write
Flash
SRAM
Standby V
DD
Current 3.0V
25
20
40
75
1
1
0.8
mA
mA
μA
I
SB
3.3V
I
LI
I
LO
V
IL
V
IH
V
IHC
V
OL
V
OH
V
OLS
V
OHS
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Flash Output Low Voltage
Flash Output High Voltage
SRAM Output Low Voltage
SRAM Output High Voltage
μA
μA
V
V
V
V
V
V
V
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
I
OL
=100 μA, V
DD
=V
DD
Min
I
OH
=-100 μA, V
DD
=V
DD
Min
I
OL
=1 mA, V
DD
=V
DD
Min
I
OH
=-500 μA, V
DD
=V
DD
Min
0.7V
DD
V
DD
-0.3
0.2
V
DD
-0.2
0.4
2.2
T5.5 520
TABLE
6: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Minimum
100
100
Units
μs
μs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T6.0 520
TABLE
7: C
APACITANCE
(Ta = 25°C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
12 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T7.0 520
TABLE
8: F
LASH
R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T8.1 520
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SST32HF164-70-4E-L3K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MIXED MEMORY|SRAM+EEPROM|CMOS|BGA|48PIN|PLASTIC |
| SST32HF164-70-4E-LBK | 功能描述:組合存儲器 16M FLASH 4M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
| SST32HF164-70-4E-LBKE | 功能描述:組合存儲器 16M FLASH 4M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
| SST32HF164-70-4E-TBK | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash (MPF) + SRAM ComboMemory |
| SST32HF164-90-4C-EK | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash (MPF) + SRAM ComboMemory |
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