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參數(shù)資料
| 型號： | SST32HF1621C-70-4C-LFSE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | 存儲器 |
| 英文描述： | Multi-Purpose Flash Plus + SRAM ComboMemory |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA63 |
| 封裝： | 8 X 10 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, MO-210, LFBGA-63 |
| 文件頁數(shù)： | 8/36頁 |
| 文件大?。?/td> | 413K |
| 代理商： | SST32HF1621C-70-4C-LFSE |
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8
Preliminary Specifications
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
TABLE
3: P
IN
D
ESCRIPTION
Symbol
A
MS1
to A
0
Address Inputs
Pin Name
Functions
To provide flash address, A
MS
-A
0
.
To provide SRAM address, A
MS
-A
0
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a flash Erase/Program cycle. The outputs are in
tri-state when OE# is high or BES1# is high or BES2 is low and BEF# is high.
To activate the Flash memory bank when BEF# is low
SRAM Memory Bank Enable To activate the SRAM memory bank when BES1# is low
SRAM Memory Bank Enable To activate the SRAM memory bank when BES2 is high
Output Enable
To gate the data output buffers for Flash
2
only
Output Enable
To gate the data output buffers for SRAM
2
only
Write Enable
To control the Write operations for Flash
2
only
Write Enable
To control the Write operations for SRAM
2
only
Output Enable
To gate the data output buffers
Write Enable
To control the Write operations
Upper Byte Control (SRAM)
To enable DQ
15
-DQ
8
Lower Byte Control (SRAM)
To enable DQ
7
-DQ
0
Write Protect
To protect and unprotect sectors from Erase or Program operation
Reset
To Reset and return the device to Read mode
Ground
Flash
2
only
Ground
SRAM
2
only
Ground
Power Supply (Flash)
2.7-3.3V Power Supply to Flash only
Power Supply (SRAM)
2.7-3.3V Power Supply to SRAM only
No Connection
Unconnected pins
DQ
15
-DQ
0
Data Inputs/Outputs
BEF#
BES1#
BES2
OEF#
2
OES#
2
WEF#
2
WES#
2
OE#
WE#
UBS#
LBS#
WP#
RST#
V
SSF2
V
SSS2
V
SS
V
DD
F
V
DD
S
NC
Flash Memory Bank Enable
T3.3 1236
1. A
MS
= Most Significant Address
A
MS
= A
19
for SST32HF16x1x and A
20
for SST32HF32x1x
2. LS package only
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST32HF1621C-70-4C-LS | Multi-Purpose Flash Plus + SRAM ComboMemory |
| SST32HF1621C-70-4C-LSE | Multi-Purpose Flash Plus + SRAM ComboMemory |
| SST32HF1621C-70-4E-LFS | Multi-Purpose Flash Plus + SRAM ComboMemory |
| SST32HF1621C-70-4E-LFSE | Multi-Purpose Flash Plus + SRAM ComboMemory |
| SST32HF1621C-70-4E-LS | Multi-Purpose Flash Plus + SRAM ComboMemory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST32HF1621C-70-4C-LS | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory |
| SST32HF1621C-70-4C-LSE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory |
| SST32HF1621C-70-4E-LFS | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory |
| SST32HF1621C-70-4E-LFSE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory |
| SST32HF1621C-70-4E-LS | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:Multi-Purpose Flash Plus + SRAM ComboMemory |
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