參數(shù)資料
型號(hào): SST31LF043-300-4E-WI
廠商: Silicon Storage Technology, Inc.
元件分類(lèi): 組合存儲(chǔ)器
英文描述: 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory
中文描述: 4 Mbit閃存1兆位或256千位的SRAM ComboMemory
文件頁(yè)數(shù): 14/24頁(yè)
文件大?。?/td> 294K
代理商: SST31LF043-300-4E-WI
14
Data Sheet
2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021 / SST31LF021E
2001 Silicon Storage Technology, Inc.
S71137-03-000
10/01 392
FIGURE 8: F
LASH
T
OGGLE
BIT
T
IMING
D
IAGRAM
FIGURE 9: WE# C
ONTROLLED
F
LASH
S
ECTOR
-E
RASE
T
IMING
D
IAGRAM
392 ILL F07.0
ADDRESS A17-0
DQ6
WE#
OE#
BEF#
TOE
TOEH
TBE
TOES
TWO READ CYCLES
WITH SAME OUTPUTS
BES#
392 ILL F08.1
ADDRESS A17-0
DQ7-0
WE#
SW0
Note: The device also supports BEF# controlled Sector-Erase operation. The WE# and BEF#
signals are interchangeable as long as minimum timings are met. (See Table 12)
SAX = Sector Address
SW1
SW2
SW3
SW4
SW5
5555
2AAA
2AAA
5555
5555
55
30
55
AA
80
AA
SAX
OE#
BEF#
SIX-BYTE CODE FOR SECTOR-ERASE
TSE
TWP
BES#
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SST31LF043-70-4E-WH 制造商:SST 制造商全稱(chēng):Silicon Storage Technology, Inc 功能描述:4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory
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