參數(shù)資料
型號(hào): SST31LF021-70-4E-WH
廠商: SILICON STORAGE TECHNOLOGY INC
元件分類: 存儲(chǔ)器
英文描述: 2 Mbit Flash + 1 Mbit SRAM ComboMemory
中文描述: SPECIALTY MEMORY CIRCUIT, PDSO32
封裝: 8 X 14 MM, MO-142BA, TSOP1-32
文件頁(yè)數(shù): 14/24頁(yè)
文件大小: 294K
代理商: SST31LF021-70-4E-WH
14
Data Sheet
2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021 / SST31LF021E
2001 Silicon Storage Technology, Inc.
S71137-03-000
10/01 392
FIGURE 8: F
LASH
T
OGGLE
BIT
T
IMING
D
IAGRAM
FIGURE 9: WE# C
ONTROLLED
F
LASH
S
ECTOR
-E
RASE
T
IMING
D
IAGRAM
392 ILL F07.0
ADDRESS A17-0
DQ6
WE#
OE#
BEF#
TOE
TOEH
TBE
TOES
TWO READ CYCLES
WITH SAME OUTPUTS
BES#
392 ILL F08.1
ADDRESS A17-0
DQ7-0
WE#
SW0
Note: The device also supports BEF# controlled Sector-Erase operation. The WE# and BEF#
signals are interchangeable as long as minimum timings are met. (See Table 12)
SAX = Sector Address
SW1
SW2
SW3
SW4
SW5
5555
2AAA
2AAA
5555
5555
55
30
55
AA
80
AA
SAX
OE#
BEF#
SIX-BYTE CODE FOR SECTOR-ERASE
TSE
TWP
BES#
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SST31LF021E 2 Mbit Flash + 1 Mbit SRAM ComboMemory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST31LF021-70-4E-WHE 功能描述:閃存 2M FLASH 1M SRAM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST31LF021E 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021E-300-4C-WH 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021E-300-4E-WH 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021E-70-4C-WH 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:2 Mbit Flash + 1 Mbit SRAM ComboMemory