參數(shù)資料
型號： SST304
英文描述： Input/Output (I/O); Supply Voltage: 2.4V to 5.5V; Temperature Range: -40° to +85°C; Package: 16-QFN (16-COL); Features: 10 Configurable I/Os
中文描述： 晶體管|場效應| N溝道| 5mA的我（直）|至236
文件頁數(shù)： 8/12頁
文件大?。?/td> 111K
代理商： SST304
8
Data Sheet
2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM
ROM/RAM Combo
SST30VR021 / SST30VR022 / SST30VR023
2001 Silicon Storage Technology, Inc.
S71135-02-000
4/01
380
FIGURE
6: SRAM R
EAD
C
YCLE
T
IMING
D
IAGRAM
(A
DDRESS
C
ONTROLLED
) (OE# = RAMCS# = V
IL
, WE# = V
IH
)
FIGURE 7: SRAM R
EAD
C
YCLE
T
IMING
D
IAGRAM
(OE#
OR
RAMCS# C
ONTROLLED
)
TRC
TAA
Data Valid
380 ILL F04.0
Data Out
Previous Data Valid
Address
TOH
TRC
TAA
TOE
TCO
TLZ(2)
TOH
TOHZ(1)
THZ
(1,2)
Data Valid
380 ILL F05.0
Data Out
RAMCS#
High-Z
Address
OE#
Notes: 1. THZ and TOHZ are defined as the time at which the outputs achieve the open circuit condition
and are referenced to the VOH or VOL.
2. At any given temperature and voltage condition THZ(max) is less than TLZ(min) both for a given
device and from device to device.
3. WE# is high for Read cycle.
4. Address valid prior to coincidence with RAMCS# transition low.
相關PDF資料
PDF描述
SST305 Input/Output (I/O); Supply Voltage: 2.4V to 5.5V; Temperature Range: -40° to +85°C; Package: 16-SOIC; Features: 10 Configurable I/Os
SST30VR021-500-C-KH SRAM/ROM
SST30VR021-500-E-KH SRAM/ROM
SST30VR021-500-I-KH Input/Output (I/O); Supply Voltage: 2.4V to 5.25V; Temperature Range: -40° to +85°C; Package: 8-SOIC; Features: 4 Configurable I/Os
SST30VR021-500-I-WH Input/Output (I/O); Supply Voltage: 2.4V to 5.25V; Temperature Range: -40° to +85°C; Package: 16-QFN (16-COL); Features: 6 Configurable I/Os
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SST-3-07/FR/97 制造商:TE Connectivity 功能描述:
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