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參數(shù)資料
| 型號： | SST29VE020-200-4C-EH |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 128Kx8 EEPROM |
| 中文描述： | 256K X 8 FLASH 2.7V PROM, 200 ns, PDSO32 |
| 封裝： | 8 X 20 MM, MO-142BD, TSOP1-32 |
| 文件頁數(shù)： | 1/26頁 |
| 文件大小： | 326K |
| 代理商： | SST29VE020-200-4C-EH |
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2001 Silicon Storage Technology, Inc.
S71060-06-000
6/01
1
301
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
512 Kbit (64K x8) Page-Mode EEPROM
SST29EE512 / SST29LE512 / SST29VE512
FEATURES:
Single Voltage Read and Write Operations
– 5.0V-only for SST29EE512
– 3.0-3.6V for SST29LE512
– 2.7-3.6V for SST29VE512
Superior Reliability
–
Endurance: 100,000 Cycles (typical)
–
Greater than 100 years Data Retention
Low Power Consumption
–
Active Current: 20 mA (typical) for 5V and 10 mA
(typical) for 3.0/2.7V
–
Standby Current: 10 μA (typical)
Fast Page-Write Operation
–
128 Bytes per Page, 512 Pages
–
Page-Write Cycle: 5 ms (typical)
–
Complete Memory Rewrite: 2.5 sec (typical)
–
Effective Byte-Write Cycle Time: 39 μs (typical)
Fast Read Access Time
–
5.0V-only operation: 70 and 90 ns
–
3.0-3.6V operation: 150 and 200 ns
–
2.7-3.6V operation: 200 and 250 ns
Latched Address and Data
Automatic Write Timing
–
Internal V
PP
Generation
End of Write Detection
–
Toggle Bit
–
Data# Polling
Hardware and Software Data Protection
Product Identification can be accessed via
Software Operation
TTL I/O Compatibility
JEDEC Standard
–
Flash EEPROM Pinouts and command sets
Packages Available
–
32-lead PLCC
–
32-lead TSOP (8mm x 14mm, 8mm x 20mm)
–
32-pin PDIP
PRODUCT DESCRIPTION
The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write
EEPROMs manufactured with SST
’
s proprietary, high
performance CMOS SuperFlash technology. The split-
gate cell design and thick oxide tunneling injector attain
better reliability and manufacturability compared with
alternate approaches. The SST29EE/LE/VE512 write
with a single power supply. Internal Erase/Program is
transparent to the user. The SST29EE/LE/VE512 con-
form to JEDEC standard pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE/
LE/VE512 provide a typical Byte-Write time of 39 μsec.
The entire memory, i.e., 64 KBytes, can be written page-
by-page in as little as 2.5 seconds, when using interface
features such as Toggle Bit or Data# Polling to indicate
the completion of a Write cycle. To protect against inad-
vertent write, the SST29EE/LE/VE512 have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum
of applications, the SST29EE/LE/VE512 are offered with
a guaranteed Page-Write endurance of 10,000 cycles.
Data retention is rated at greater than 100 years.
The SST29EE/LE/VE512 are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applica-
tions, the SST29EE/LE/VE512 significantly improve per-
formance
and
reliability,
consumption. The SST29EE/LE/VE512 improve flexibil-
ity while lowering the cost for program, data, and configu-
ration storage applications.
while
lowering
power
To meet high density, surface mount requirements, the
SST29EE/LE/VE512 are offered in 32-lead PLCC and 32-
lead TSOP packages. A 600-mil, 32-pin PDIP package is
also available. See Figures 1, 2, and 3 for pinouts.
Device Operation
The SST Page-Mode EEPROM offers in-circuit electrical
write capability. The SST29EE/LE/VE512 do not require
separate Erase and Program operations. The internally
timed Write cycle executes both erase and program trans-
parently to the user. The SST29EE/LE/VE512 have indus-
try standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/LE/
VE512 are compatible with industry standard EEPROM
pinouts and functionality.
SST29EE512 / SST29LE512 / SST29VE512512Kb Page-Mode flash memories
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST29VE020-200-4C-WH | 128Kx8 EEPROM |
| SST29VE020-200-4I-NH | 128Kx8 EEPROM |
| SST29VE020-200-4I-WH | 128Kx8 EEPROM |
| SST29VF010 | 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
| SST29VF010-120-4C-EH | 2 Mbit (256K x8) Page-Mode EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST29VE020-200-4C-EHE | 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE020-200-4C-NH | 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE020-200-4C-NHE | 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE020-200-4I-EH | 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE020-200-4I-EHE | 功能描述:閃存 256K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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