參數(shù)資料
型號: SST29VE010-200-3I-U
廠商: Silicon Storage Technology, Inc.
英文描述: 1 Megabit (128K x 8) Page Mode EEPROM
中文描述: 1兆位(128K的× 8)頁模式的EEPROM
文件頁數(shù): 8/27頁
文件大小: 900K
代理商: SST29VE010-200-3I-U
8
1998 Silicon Storage Technology, Inc.
304-04 12/97
1 Megabit Page Mode EEPROM
SST29EE010, SST29LE010, SST29VE010
T
ABLE
5: 29EE010 DC O
PERATING
C
HARACTERISTICS
V
CC
= 5V±10%
Limits
Max
Symbol
I
CC
Parameter
Power Supply Current
Read
Min
Units
Test Conditions
CE#=OE#=V
IL,
WE#=V
IH
, all I/Os open,
Address input = V
IL
/V
IH
, at f=1/T
RC
Min.,
V
CC
=V
CC
Max
CE#=WE#=V
IL,
OE#=V
IH,
V
CC
=V
CC
Max.
CE#=OE#=WE#=V
IH,
V
CC
=V
CC
Max.
30
mA
Write
Standby V
CC
Current
(TTL input)
Standby V
CC
Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Supervoltage for A
9
Supervoltage Current
for A
9
50
3
mA
mA
I
SB1
I
SB2
50
μA
CE#=OE#=WE#=V
CC
-0.3V.
V
CC
= V
CC
Max.
V
IN
=GND to V
CC
, V
CC
= V
CC
Max.
V
OUT
=GND to V
CC
, V
CC
= V
CC
Max.
V
CC
= V
CC
Max.
V
CC
= V
CC
Max.
I
OL
= 2.1 mA, V
CC
= V
CC
Min.
I
OH
= -400μA, V
CC
= V
CC
Min.
CE# = OE# =V
IL
, WE# = V
IH
CE# = OE# = V
IL
, WE# = V
IH
,
A
9
= V
H
Max.
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
V
H
I
H
1
μA
μA
V
V
V
V
V
μA
10
0.8
2.0
0.4
2.4
11.6
12.4
100
304 PGM T5.0
T
ABLE
6: 29LE010/29VE010 DC O
PERATING
C
HARACTERISTICS
V
CC
= 3.0-3.6
FOR
29LE010, V
CC
= 2.7-3.6
FOR
29VE010
Limits
Symbol
Parameter
Min
Max
I
CC
Power Supply Current
Read
12
Units
Test Conditions
CE#=OE#=V
IL,
WE#=V
IH
, all I/Os open,
Address input = V
IL
/V
IH
, at f=1/T
RC
Min.,
V
CC
=V
CC
Max
CE#=WE#=V
IL,
OE#=V
IH,
V
CC
=V
CC
Max.
CE#=OE#=WE#=V
IH,
V
CC
=V
CC
Max.
mA
Write
Standby V
CC
Current
(TTL input)
Standby V
CC
Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Supervoltage for A
9
Supervoltage Current
for A
9
15
1
mA
mA
I
SB1
I
SB2
15
μA
CE#=OE#=WE#=V
CC
-0.3V.
V
CC
= V
CC
Max.
V
IN
=GND to V
CC
, V
CC
= V
CC
Max.
V
OUT
=GND to V
CC
, V
CC
= V
CC
Max.
V
CC
= V
CC
Max.
V
CC
= V
CC
Max.
I
OL
= 100 μA, V
CC
= V
CC
Min.
I
OH
= -100 μA, V
CC
= V
CC
Min.
CE# = OE# =V
IL
, WE# = V
IH
CE# = OE# = V
IL
, WE# = V
IH
,
A
9
= V
H
Max.
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
V
H
I
H
1
10
0.8
μA
μA
V
V
V
V
V
μA
2.0
0.4
2.4
11.6
12.4
100
304 PGM T6.0
相關(guān)PDF資料
PDF描述
SST29VE010-200-3I-UH 1 Megabit (128K x 8) Page Mode EEPROM
SST29VE010-200-3I-W 1 Megabit (128K x 8) Page Mode EEPROM
SST29VE010-200-3I-WH 1 Megabit (128K x 8) Page Mode EEPROM
SST29VE010-200-4C-E 1 Megabit (128K x 8) Page Mode EEPROM
SST29VE010-200-4C-N 1 Megabit (128K x 8) Page Mode EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST29VE010-200-4C-EH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-EHE 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-NH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-NHE 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-WH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel