參數(shù)資料
型號(hào)： SST29VE010-150-4I-WHE
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類： PROM
英文描述： 1 Mbit (128K x8) Page-Write EEPROM
中文描述： 128K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
封裝： 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32
文件頁(yè)數(shù)： 1/30頁(yè)
文件大小： 417K
代理商： SST29VE010-150-4I-WHE
2005 Silicon Storage Technology, Inc.
S71061-11-000
1
9/05
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
1 Mbit (128K x8) Page-Write EEPROM
SST29EE010 / SST29VE010
FEATURES:
Single Voltage Read and Write Operations
– 4.5-5.5V for SST29EE010
– 2.7-3.6V for SST29VE010
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption
– Active Current: 20 mA (typical) for 5V and
10 mA (typical) for 2.7V
– Standby Current: 10 μA (typical)
Fast Page-Write Operation
– 128 Bytes per Page, 1024 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte-Write Cycle Time: 39 μs (typical)
Fast Read Access Time
– 4.5-5.5V operation: 70 and 90 ns
– 2.7-3.6V operation: 150 and 200 ns
Latched Address and Data
Automatic Write Timing
– Internal V
PP
Generation
End of Write Detection
– Toggle Bit
– Data# Polling
Hardware and Software Data Protection
Product Identification can be accessed via
Software Operation
TTL I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
– 32-pin PDIP
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST29EE/VE010 are 128K x8 CMOS Page-Write
EEPROMs manufactured with SST’s proprietary, high-per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE/VE010 write with a single
power supply. Internal Erase/Program is transparent to the
user. The SST29EE/VE010 conform to JEDEC standard
pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE/
VE010 provide a typical Byte-Write time of 39 μsec. The
entire memory, i.e., 128 Kbyte, can be written page-by-
page in as little as 5 seconds, when using interface features
such as Toggle Bit or Data# Polling to indicate the comple-
tion of a Write cycle. To protect against inadvertent write,
the SST29EE/VE010 have on-chip hardware and Software
Data Protection schemes. Designed, manufactured, and
tested for a wide spectrum of applications, the SST29EE/
VE010 are offered with a guaranteed Page-Write endur-
ance of 10,000 cycles. Data retention is rated at greater
than 100 years.
The SST29EE/VE010 are suited for applications that
require convenient and economical updating of pro-
gram, configuration, or data memory. For all system
applications,
the
SST29EE/VE010
improve performance and reliability, while lowering
power consumption. The SST29EE/VE010 improve
flexibility while lowering the cost for program, data, and
configuration storage applications.
significantly
To meet high density, surface mount requirements, the
SST29EE/VE010 are offered in 32-lead PLCC and 32-lead
TSOP packages. A 600-mil, 32-pin PDIP package is also
available. See Figures 1, 2, and 3 for pin assignments.
Device Operation
The SST Page-Write EEPROM offers in-circuit electrical
write capability. The SST29EE/VE010 does not require
separate Erase and Program operations. The internally
timed Write cycle executes both erase and program trans-
parently to the user. The SST29EE/VE010 have industry
standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/VE010
are compatible with industry standard EEPROM pinouts
and functionality.
SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories
相關(guān)PDF資料
PDF描述
SST29VE010-200-4C-EHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4C-NHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4C-WHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4I-EHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4I-NHE 1 Mbit (128K x8) Page-Write EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST29VE010-200-4C-EH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-EHE 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-NH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-NHE 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-WH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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