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    參數(shù)資料
    型號(hào)： SST29LE512-200-4C-EH
    廠商： Silicon Storage Technology, Inc.
    英文描述： 512 Kbit (64K x8) Page-Mode EEPROM
    中文描述： 512千位（64K的× 8）頁模式的EEPROM
    文件頁數(shù)： 1/26頁
    文件大?。?/td> 326K
    代理商： SST29LE512-200-4C-EH
    2001 Silicon Storage Technology, Inc.
    S71060-06-000
    6/01
    1
    301
    The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
    SSF is a trademark of Silicon Storage Technology, Inc.
    These specifications are subject to change without notice.
    Data Sheet
    512 Kbit (64K x8) Page-Mode EEPROM
    SST29EE512 / SST29LE512 / SST29VE512
    FEATURES:
    Single Voltage Read and Write Operations
    – 5.0V-only for SST29EE512
    – 3.0-3.6V for SST29LE512
    – 2.7-3.6V for SST29VE512
    Superior Reliability
    –
    Endurance: 100,000 Cycles (typical)
    –
    Greater than 100 years Data Retention
    Low Power Consumption
    –
    Active Current: 20 mA (typical) for 5V and 10 mA
    (typical) for 3.0/2.7V
    –
    Standby Current: 10 μA (typical)
    Fast Page-Write Operation
    –
    128 Bytes per Page, 512 Pages
    –
    Page-Write Cycle: 5 ms (typical)
    –
    Complete Memory Rewrite: 2.5 sec (typical)
    –
    Effective Byte-Write Cycle Time: 39 μs (typical)
    Fast Read Access Time
    –
    5.0V-only operation: 70 and 90 ns
    –
    3.0-3.6V operation: 150 and 200 ns
    –
    2.7-3.6V operation: 200 and 250 ns
    Latched Address and Data
    Automatic Write Timing
    –
    Internal V
    PP
    Generation
    End of Write Detection
    –
    Toggle Bit
    –
    Data# Polling
    Hardware and Software Data Protection
    Product Identification can be accessed via
    Software Operation
    TTL I/O Compatibility
    JEDEC Standard
    –
    Flash EEPROM Pinouts and command sets
    Packages Available
    –
    32-lead PLCC
    –
    32-lead TSOP (8mm x 14mm, 8mm x 20mm)
    –
    32-pin PDIP
    PRODUCT DESCRIPTION
    The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write
    EEPROMs manufactured with SST
    ’
    s proprietary, high
    performance CMOS SuperFlash technology. The split-
    gate cell design and thick oxide tunneling injector attain
    better reliability and manufacturability compared with
    alternate approaches. The SST29EE/LE/VE512 write
    with a single power supply. Internal Erase/Program is
    transparent to the user. The SST29EE/LE/VE512 con-
    form to JEDEC standard pinouts for byte-wide memories.
    Featuring high performance Page-Write, the SST29EE/
    LE/VE512 provide a typical Byte-Write time of 39 μsec.
    The entire memory, i.e., 64 KBytes, can be written page-
    by-page in as little as 2.5 seconds, when using interface
    features such as Toggle Bit or Data# Polling to indicate
    the completion of a Write cycle. To protect against inad-
    vertent write, the SST29EE/LE/VE512 have on-chip
    hardware and Software Data Protection schemes.
    Designed, manufactured, and tested for a wide spectrum
    of applications, the SST29EE/LE/VE512 are offered with
    a guaranteed Page-Write endurance of 10,000 cycles.
    Data retention is rated at greater than 100 years.
    The SST29EE/LE/VE512 are suited for applications that
    require convenient and economical updating of program,
    configuration, or data memory. For all system applica-
    tions, the SST29EE/LE/VE512 significantly improve per-
    formance
    and
    reliability,
    consumption. The SST29EE/LE/VE512 improve flexibil-
    ity while lowering the cost for program, data, and configu-
    ration storage applications.
    while
    lowering
    power
    To meet high density, surface mount requirements, the
    SST29EE/LE/VE512 are offered in 32-lead PLCC and 32-
    lead TSOP packages. A 600-mil, 32-pin PDIP package is
    also available. See Figures 1, 2, and 3 for pinouts.
    Device Operation
    The SST Page-Mode EEPROM offers in-circuit electrical
    write capability. The SST29EE/LE/VE512 do not require
    separate Erase and Program operations. The internally
    timed Write cycle executes both erase and program trans-
    parently to the user. The SST29EE/LE/VE512 have indus-
    try standard optional Software Data Protection, which SST
    recommends always to be enabled. The SST29EE/LE/
    VE512 are compatible with industry standard EEPROM
    pinouts and functionality.
    SST29EE512 / SST29LE512 / SST29VE512512Kb Page-Mode flash memories
    相關(guān)PDF資料
    PDF描述
    SST29LE512-200-4C-NH 512 Kbit (64K x8) Page-Mode EEPROM
    SST29LE512-200-4C-PH 512 Kbit (64K x8) Page-Mode EEPROM
    SST29LE512-200-4C-UH 512 Kbit (64K x8) Page-Mode EEPROM
    SST29LE512-200-4C-WH 512 Kbit (64K x8) Page-Mode EEPROM
    SST29LE512-200-4I-EH 512 Kbit (64K x8) Page-Mode EEPROM
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    SST29LE512-200-4C-NH 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:512 Kbit (64K x8) Page-Mode EEPROM
    SST29LE512-200-4C-PH 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:512 Kbit (64K x8) Page-Mode EEPROM
    SST29LE512-200-4C-UH 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:512 Kbit (64K x8) Page-Mode EEPROM
    SST29LE512-200-4C-WH 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:512 Kbit (64K x8) Page-Mode EEPROM
    SST29LE512-200-4I-EH 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:512 Kbit (64K x8) Page-Mode EEPROM
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