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參數(shù)資料
| 型號： | SST28VF040A-200-4C-NH |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 4 Mbit (512K x8) SuperFlash EEPROM |
| 中文描述： | 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32 |
| 封裝： | PLASTIC, MS-016AE, LCC-32 |
| 文件頁數(shù)： | 10/24頁 |
| 文件大?。?/td> | 323K |
| 代理商： | SST28VF040A-200-4C-NH |
10
Data Sheet
4 Mbit SuperFlash EEPROM
SST28SF040A / SST28VF040A
2001 Silicon Storage Technology, Inc.
S71077-04-000
6/01
310
AC CHARACTERISTICS
TABLE 11: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
FOR
SST28SF040A
IEEE
Symbol
tAVAV
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tELQX
tGLQX
tAXQX
Industry
Symbol
T
RC
T
AA
T
CE
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
SST28SF040A-90
Min
90
SST28SF040A-120
Min
120
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
90
90
45
120
120
50
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
0
0
0
0
20
20
30
30
0
0
T11.6 310
TABLE 12: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
FOR
SST28VF040A
IEEE
Symbol
tAVAV
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tELQX
tGLQX
tAXQX
Industry
Symbol
T
RC
T
AA
T
CE
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
SST28VF040A-150
Min
150
SST28VF040A-200
Min
200
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
150
150
75
200
200
100
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
0
0
0
0
40
40
60
60
0
0
T12.5 310
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| SST28VF040A-200-4C-PH | 4 Mbit (512K x8) SuperFlash EEPROM |
| SST28VF040A-200-4C-WH | 4 Mbit (512K x8) SuperFlash EEPROM |
| SST28VF040A-200-4I-EH | 4 Mbit (512K x8) SuperFlash EEPROM |
| SST28VF040A-200-4I-NH | 4 Mbit (512K x8) SuperFlash EEPROM |
| SST29LE010-200-4I-W | 1 Megabit (128K x 8) Page Mode EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST28VF040A-200-4C-NHE | 功能描述:電可擦除可編程只讀存儲器 512K X 8 200ns RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| SST28VF040A-200-4C-PH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit (512K x8) SuperFlash EEPROM |
| SST28VF040A-200-4C-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit (512K x8) SuperFlash EEPROM |
| SST28VF040A2004IEH | 制造商:SST 功能描述:New |
| SST28VF040A-200-4I-EH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit (512K x8) SuperFlash EEPROM |
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