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參數(shù)資料
| 型號： | SST27SF256-90-3C-PG |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash |
| 中文描述： | 32K X 8 FLASH 12V PROM, 90 ns, PDIP28 |
| 封裝： | PLASTIC, MO-015AH, DIP-28 |
| 文件頁數(shù)： | 10/26頁 |
| 文件大小： | 268K |
| 代理商： | SST27SF256-90-3C-PG |
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10
Data Sheet
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash
SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
2001 Silicon Storage Technology, Inc.
S71152-02-000
5/01
502
AC CHARACTERISTICS
TABLE 10: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Minimum
100
100
Units
μs
μs
T10.1 502
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: C
APACITANCE
(Ta = 25
°
C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T11.0 502
TABLE 12: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
1000
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
100
100
T12.2 502
TABLE 13: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 5.0V±10%
(Ta = 0
°
C to +70
°
C (Commercial))
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ1
T
OLZ1
T
CHZ1
T
OHZ1
T
OH1
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
SST27SF256-70
SST27SF512-70
SST27SF010-70
SST27SF020-70
Min
70
SST27SF256-90
SST27SF512-90
SST27SF010-90
SST27SF020-90
Min
90
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
70
70
35
90
90
45
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
0
0
0
0
25
25
30
30
0
0
T13.1 502
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST27SF256-90-3C-PH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash |
| SST27SF256-90-3C-WG | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash |
| SST27SF256-90-3C-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash |
| SST27SF512 | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash |
| SST27SF512_05 | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash |
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