參數(shù)資料
型號: SST201-T1
英文描述: TRANSISTOR J-FET SOT-23
中文描述: 晶體管的J - FET的SOT - 23封裝
文件頁數(shù): 2/5頁
文件大小: 72K
代理商: SST201-T1
J/SST201 Series
2
Siliconix
P-37995—Rev. D, 11-Aug-94
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage
Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40
V
50 mA
300 C
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
–55 to 150 C
Operating Junction Temperature
–55 to 150 C
. . . . . . . . . . . . . . . . . . . .
Power Dissipation
a
Notes
a.
Derate 2.8 mW/ C above 25 C
350 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Specifications
a
Limits
J/SST201
J/SST202
J/SST204
d
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A , V
DS
= 0 V
–40
–40
–25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 10 nA
–0.3
–1.5
–0.8
–4
–0.3
–2
Saturation Drain Current
c
I
DSS
V
DS
= 15 V, V
GS
= 0 V
0.2
1
0.9
4.5
0.2
3
mA
Gate Reverse Current
I
GSS
V
GS
= –20 V, V
DS
= 0 V
–2
–100
–100
–100
pA
T
A
= 125 C
–1
nA
Gate Operating Current
I
G
V
DG
= 10 V, I
D
= 0.1 mA
V
DS
= 15 V, V
GS
= –5 V
I
G
= 1 mA , V
DS
= 0 V
–2
pA
Drain Cutoff Current
I
D(off)
V
GS(F)
2
Gate-Source Forward Voltage
0.7
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
0.5
1
0.5
mS
Common-Source
Input Capacitance
C
iss
V
= 15 V, V
= 0 V
f = 1 MHz
4.5
pF
Common-Source
Reverse Transfer Capacitance
C
rss
DS
GS
1.3
Equivalent Input Noise Voltage
e
n
V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
6
nV
Hz
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
See 2N/SST5484 Series for J204 typical characteristic curves.
NPA
NH
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