參數(shù)資料
型號： SST113-T1
英文描述： TRANSISTOR J-FET SOT-23
中文描述： 晶體管的J - FET的SOT - 23封裝
文件頁數(shù)： 3/5頁
文件大?。?/td> 76K
代理商： SST113-T1
J/SST111 Series
Siliconix
S-52424—Rev. D, 14-Apr-97
3
Typical Characteristics
160
120
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
100
0
–10
0
200
160
0
–
I
D
r
DS
I
DSS
r
DS
@ I
D
= 1 mA, V
GS
= 0
I
DSS
@ V
DS
= 20 V, V
GS
= 0
100
0
1
10
100
V
GS(off)
= –2 V
–4 V
–8 V
T
A
= 25 C
On-Resistance vs. Temperature
200
–55
25
125
0
–15
85
I
D
= 1 mA
r
DS
changes X 0.7%/ C
V
GS(off)
= –2 V
–4 V
–8 V
Turn-On Switching
5
0
–10
4
3
2
1
0
t
r
S
t
d(on)
@
I
D
= 3 mA
t
d(on)
@
I
D
= 12 mA
t
r
approximately independent of I
D
V
DD
= 5 V, R
G
= 50
V
GS(L)
= –10 V
Turn-Off Switching
30
0
10
24
18
12
6
0
t
f
@
V
GS(off)
= –2 V
t
f
@
V
GS(off)
= –8 V
t
d(off)
t
d(off)
independent of device V
GS(off)
V
DD
= 5 V, V
GS(L)
= –10 V
Capacitance vs. Gate-Source Voltage
30
–20
24
18
12
6
0
C
f = 1 MHz
C
iss
@ V
DS
= 0 V
C
rss
@ V
DS
= 0 V
0
V
GS(off)
– Gate-Source Cutoff Voltage (V)
T
A
– Temperature ( C)
V
GS
– Gate-Source Voltage (V)
V
GS(off)
– Gate-Source Cutoff Voltage (V)
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
80
60
40
20
80
40
80
60
40
20
–2
–4
–6
–8
–35
120
80
40
5
45
65
105
–2
–4
–6
–8
2
4
6
8
–4
–8
–12
–16
S
r
D
–
)
r
D
–
)
r
D
–
)
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參數(shù)描述
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