參數(shù)資料
型號(hào): SST112
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel JFETs
中文描述: N溝道JFET的
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 49K
代理商: SST112
J/SST111 Series
Vishay Siliconix
Document Number: 70232
S-04028
Rev. E, 04-Jun-01
www.vishay.com
7-3
160
120
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
100
0
10
0
200
160
0
r
DS
I
DSS
r
DS
@
I
D
=
1 mA
,
V
GS
= 0
I
DSS
@
V
DS
=
20 V, V
GS
= 0
100
0
1
10
100
V
GS(off)
=
2 V
4 V
8 V
T
A
= 25
°
C
On-Resistance vs. Temperature
200
55
25
125
0
15
85
I
D
= 1 mA
r
DS
changes X 0.7%/ C
V
GS(off)
=
2 V
4 V
8 V
Turn-On Switching
5
0
10
4
3
2
1
0
t
r
S
t
d(on)
@
I
D
t
@
I
D
= 12 mA
t
r
approximately independent of I
D
V
DD
= 5 V, R
G
= 50
V
GS(L)
=
10 V
Turn-Off Switching
30
0
10
24
18
12
6
0
t
f
@
V
GS(off)
=
2 V
t
f
@
V
GS(off)
=
8 V
t
d(off)
t
d(off)
independent of device V
GS(off
)
V
DD
= 5 V, V
GS(L)
=
10 V
Capacitance vs. Gate-Source Voltage
30
20
24
18
12
6
0
C
f = 1 MHz
C
iss
@ V
DS
= 0 V
C
rss
@ V
DS
= 0 V
0
V
GS(off)
Gate-Source Cutoff Voltage (V)
T
A
Temperature ( _C)
V
GS
Gate-Source Voltage (V)
V
GS(off)
Gate-Source Cutoff Voltage (V)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
80
60
40
20
80
40
80
60
40
20
2
4
6
8
35
120
80
40
5
45
65
105
2
4
6
8
2
4
6
8
4
8
12
16
S
r
D
I
D
r
D
r
D
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