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參數(shù)資料
| 型號(hào)： | SSR3515DRMDTX |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-254AA |
| 封裝： | HERMETICALLY SEALED, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 213K |
| 代理商： | SSR3515DRMDTX |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSR3515CTM & Z
Electrical Characteristics, per leg
Symbol
Min
Typ
Max
Units
Instantaneous Forward Voltage Drop
(Pulsed, TA = 25 C)
IF = 10Adc
IF = 15Adc
IF = 35Adc
VF1
VF2
VF3
––
0.800
0.870
1.075
0.85
0.95
1.20
VDC
Instantaneous Forward Voltage Drop
(Pulsed, TA = 125 C)
IF = 10Adc
IF = 15Adc
IF = 35Adc
VF4
VF5
VF6
––
0.660
0.740
0.980
0.73
0.85
1.10
VDC
Instantaneous Forward Voltage Drop
(Pulsed, TA = -55 C)
IF = 10Adc
IF = 15Adc
IF = 35Adc
VF7
VF8
VF9
––
0.950
1.020
1.280
1.00
1.12
1.43
VDC
Reverse Leakage Current
(Pulsed, TA = 25 C)
VR = 100 V
VR = 125 V
VR = 150 V
IR1
IR2
IR3
––
5
8
12
––
500
A
Reverse Leakage Current
(Pulsed, TA = 125 C)
VR = 100 V
VR = 125 V
VR = 150 V
IR4
IR5
IR6
––
1
1.6
2.5
––
20
mA
Reverse Leakage Current
(Pulsed, TA = 175 C)
VR = 100 V
VR = 125 V
VR = 150 V
IR7
IR8
IR9
––
20
23
30
––
mA
Junction Capacitance
(TA = 25C, f = 1MHz)
VR = 10V
CJ
––
250
350
pF
TO-254 (Suffix M) Outline:
TO-254Z (Suffix Z) Outline:
Optional Lead Bends
3x .190
.150
3x .190
.150
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