參數(shù)資料
型號(hào)： SSR1N60B
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： 600V N-Channel MOSFET
中文描述： 0.9 A, 600 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 637K
代理商： SSR1N60B
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
S
SSR1N60B / SSU1N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
0.9A, 600V, R
DS(on)
= 12
@V
GS
= 10 V
Low gate charge ( typical 5.9 nC)
Low Crss ( typical 3.6 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
SSR1N60B / SSU1N60B
600
0.9
0.57
3.0
±
30
50
0.9
2.8
5.5
2.5
28
0.22
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
stg
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
4.53
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
●
●
●
●
●
▲
!
!
S
!
!
!
D
G
I-PAK
SSU Series
D-PAK
SSR Series
G
S
D
G
S
D
相關(guān)PDF資料
PDF描述
SSU4N60B 600V N-Channel MOSFET
SSR4N60B 600V N-Channel MOSFET
SSW2N60B 600V N-Channel MOSFET
SSI2N60B 600V N-Channel MOSFET
SSW4N60B 600V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SSR1N60BTF 功能描述:MOSFET N-Ch/600V/0.9a/12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSR1N60BTF_WS 功能描述:MOSFET 600V NCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSR1N60BTM 功能描述:MOSFET N-Ch/600V/0.9a/12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSR1N60BTM_F080 功能描述:MOSFET Trans N-Ch 600V 0.9A 3Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSR1N60BTM_WS 功能描述:MOSFET 600V 0.9A 12Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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