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參數(shù)資料
| 型號(hào)： | SSP6N80A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 652K |
| 代理商： | SSP6N80A |
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θ
JC
R
θ
CS
R
θ
JA
Ο
C
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
TO-220
1.Gate 2. Drain 3. Source
3
2
1
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
μ
A (Max.) @ V
DS
= 800V
Low R
DS(ON)
: 1.
472
(Typ.)
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
Ο
C
)
Ο
C
)
Ο
C
)
Characteristic
Value
800
6
3.8
24
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
Ο
C
A
Ο
C
O
1
O
3
O
O
1
2
O
1
SSP6N80A
BV
DSS
= 800 V
R
DS(on)
= 2.0
I
D
= 6 A
480
6
16
2.0
160
1.28
- 55 to +150
300
0.78
--
62.5
--
0.5
--
30
1999 Fairchild Semiconductor Corporation
Rev. B
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SSP6N90A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SSP70N10A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFET |
| SSP7150N | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:N-Channel Enhancement MOSFET |
| SSP7200N | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:N-Channel Enhancement MOSFET |
| SSP7300N | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:N-Channel Enhancement MOSFETnull |
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