參數(shù)資料
型號(hào)： SSP10N60
廠商： Fairchild Semiconductor Corporation
英文描述： 600V N-Channel MOSFET
中文描述： 600V的N溝道MOSFET
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 909K
代理商： SSP10N60
2003 Fairchild Semiconductor Corporation
Rev. B, January 2003
S
SSP10N60B/SSS10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
9.0A, 600V, R
DS(on)
= 0.8
@V
GS
= 10 V
Low gate charge ( typical 54 nC)
Low Crss ( typical 32 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
SSP10N60B
SSS10N60B
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
600
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
9.0
5.7
36
9.0 *
5.7 *
36 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
520
9.0
15.6
5.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
156
1.25
50
0.4
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
SSP10N60B
0.8
0.5
62.5
SSS10N60B
2.5
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
TO-220
SSP Series
G
S
D
S
D
G
TO-220F
SSS Series
G
S
D
相關(guān)PDF資料
PDF描述
SSP10N60B 600V N-Channel MOSFET
SSS1N50B 520V N-Channel MOSFET
SSP1N50B 520V N-Channel MOSFET
SSS1N60B 600V N-Channel MOSFET
SSP1N60 600V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SSP10N60A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
SSP10N60B 功能描述:MOSFET N-Ch/600V/9a/0.8Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSP-115310 制造商:WASHERS 功能描述:
SSP-1156B152UP12 功能描述:LED替換燈-基于LED 1156 GREEN RoHS:否 制造商:Chicago Miniature 照明顏色:Red 光強(qiáng)度: 電壓額定值:115 V 封裝:
SSP-1156B152UP12 制造商:ITW Lumex 功能描述:LED RPL BULB GREEN 26MM BA15S
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