參數(shù)資料
型號： SSP-21120-080
英文描述： POWER CONTROLLERS|Rad Hard Hybrid. True I2t Protection. Output Safety Clamp
中文描述： POWER控制器|拉德硬混合。真正的I2t保護。輸出安全鉗
文件頁數(shù)： 2/8頁
文件大?。?/td> 80K
代理商： SSP-21120-080
2
+150
°
C
Junction Temperature
-1000 to +1000
Vdc
Pin-to-case
-0.5 to +7.0
Vdc
Bias voltage
Vdc
Vdc
Vdc
VALUE
UNIT
PARAMETER
TABLE 1. ABSOLUTE MAXIMUM RATINGS
PARAMETER
UNIT
Vdc
Vdc
Vdc
Vdc
VALUE
+9.0 to +40.0
+4.5 to V Bias
-40 to +40
+4.5 to +5.5
V Bias voltage
TABLE 2. RECOMMENDED OPERATING CONDITIONS
Power Input To Power Ground
Control Input To Signal Ground
Power Ground To Signal Ground
50 continuous
100 Volts, 50 ms transient
-0.5 to +7.0
-100 to +100
Power Input To Power Ground
Control Input To Signal Ground
Power Ground To Signal Ground
TABLE 3. SSP-21120 SPECIFICATIONS (SEE NOTES 1 AND 2)
PARAMETER
CONDITIONS
CONTROL CIRCUIT
Logic Type
UNIT
VALUE
V Bias Supply Current
Control Turn-On Voltage
Control Turn-Off Voltage
Control Input Current
Control Input Current
Control Input Current
Status Output Voltage
Status Output Voltage
Status Truth Table
POWER CIRCUIT
Power to Internal PWR
supply
Max. Continuous Current
'On' Resistance
Power Dissipation
Power Out Leakage
Current to Power Ground
Max Load Capacitance
for Start-Up
Signal to Neutral Ground
Isolation
Output Capacitance
Trip Reset Time
Rupture Capacity
Output-to Input Parasitic
Diode, Continuous
Current Per Amp Of
Rated Current
V
CC
= 4.5 to 5.5 Vdc
mA 10 max
V
2.0 to 5.5
V
-0.5 to 0.8
μ
A
50 max
μ
A
50 max
μ
A
-50 min
V
0.4 max
V
2.4 min
control voltage = 5.0 V
control voltage = 2.4 V
control voltage = 0.8 V
V
CC
= 4.5 V, I
OL
= 2.5 mA
V
CC
= 4.5 V, I
OH
= -1.0 mA
see TABLE 5
Nominal 28 V
mA 14 typ
See TABLE 4
See TABLE 4
See TABLE 4
Power In = 9 - 40 V
(see note 2 )
Power In = 9 - 40 V
(see note 2 )
mA/A 0.1 max
μ
F/A 28 typ
at 100 Vdc
pF
1000 typ
(see note 2 )
pF/A 300 typ
ms 30 min
A
Unlimited
Unlimited
Power Out Voltage >
Power In Voltage
A
1.0 typ
Output-to Input Parasitic
Diode, Pulsed Current
Per Amp Of Rated
Current
Power Out Voltage
>
Power In Voltage Pulse
Width
≤
100
μ
S
A
4.0 typ
TABLE 3. SSP-21120 SPECIFICATIONS (SEE NOTES 1 AND 2)
PARAMETER
POWER CIRCUIT
(continued)
CONDITIONS
UNIT
VALUE
Output-to Input Parasitic
Diode, Forward Voltage
at Continuous Current
Power Out Voltage >
Power In Voltage
V
2.0 max
Isolation Resistance,
Any Pin to Case
Pin-to-Case Voltage =
100 Vdc
M
50 min
M
50 min
Voltage Drop
Trip Characteristics
Response Time
TEMPERATURE RANGE
Operating (Baseplate)
Storage
across stud 1 and 2
see FIGURE 2
see FIGURE 3
Vdc
0.25 max
°
C
°
C
-55 to +85
-55 to +125
THERMAL RESISTANCE
Case to Sink (
θ
CS
)
Case to Ambient (
θ
CA
)
°
C/W
°
C/W
0.1 max
10 max
Temperature Rise,
Junction-to-Case
Rated Load
°
C
10
PHYSICAL
CHARACTERISTICS
Size
Weight
see FIGURE 4
oz
g
18 max
510.3 max
Note: Power Ground = Neutral; Bias Supply Common = Signal Ground
Note: Power Ground = Neutral; Bias Supply Common = Signal Ground
Notes:
1. -55
°
C
≤
Case Temperature
≤
85
°
C.
2.
“
A
”
is Amps of Rated Module Current.
3. Power Ground = neutral; Bias Supply Common = Signal Ground
4. Control Input must never be left floating.
TABLE 4.
PART NUMBER I-MAX*(AMPS)“ON(OHMS)**
POWER
DISSIPATION
(WATTS)**
22.0
SSP21120-080
80
0.0032
* I-MAX is the maximum continuous current.
** Specified for -55
°
C to +85
°
C.
TTL/CMOS
compatible
Power Ground to Signal
Ground Voltage = 50 Vdc
Isolation Resistance
Power Ground to
Signal Ground
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