參數(shù)資料
型號: SSM6N09FU_07
廠商: Toshiba Corporation
英文描述: High Speed Switching Applications
中文描述: 高速開關(guān)應(yīng)用
文件頁數(shù): 1/5頁
文件大?。?/td> 169K
代理商: SSM6N09FU_07
SSM6N09FU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N09FU
High Speed Switching Applications
Small package
Low Drain-Source ON resistance.
: R
on
= 0.7
(max) (@V
GS
= 10 V)
: R
on
= 1.2
(max) (@V
GS
= 4 V)
Absolute Maximum Ratings
(Ta
=
25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
30
V
Gate-Source voltage
V
GSS
±
20
V
DC
I
D
400
Drain current
Pulse
I
DP
800
mA
Drain power dissipation (Ta
=
25°C)
P
D
(Note 1)
300
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.32 mm
2
×
6) Figure 1.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
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