參數(shù)資料
型號(hào): SSM6J08FU
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
中文描述: 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山型(U型MOSII)
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 162K
代理商: SSM6J08FU
SSM6J08FU
2003-02-19
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS
II
)
SSM6J08FU
Power Management Switch
DC-DC Converter
Small Package
Low on Resistance : R
on
= 0.18
(max) (@V
GS
=
4 V)
: R
on
= 0.26
(max) (@V
GS
=
2.5 V)
Low Gate Threshold Voltage
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
12
V
DC
I
D
1.3
Drain current
Pulse
I
DP
(Note 2)
2.6
A
Drain power dissipation
P
D
(Note 1)
300
mW
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
55~150
C
Note1: Mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm
2
6) Fig: 1.
Note2: The pulse width limited by max channel temperature.
Marking
Equivalent Circuit
Fig 1: 25.4 mm 25.4 mm 1.6 t,
Cu Pad: 0.32 mm
2
6
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2J1D
Weight: 6.8 mg (typ.)
0.4 mm
0
6
K D D
4
1
2
3
5
4
1
2
3
6
5
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