參數(shù)資料
型號(hào): SSM5N03FE
廠商: Toshiba Corporation
英文描述: High-Speed Switching Applications
中文描述: 高速開(kāi)關(guān)應(yīng)用
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 142K
代理商: SSM5N03FE
SSM5N03FE
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM5N03FE
High-Speed Switching Applications
Analog-Switch Applications
Input impedance is high; driving current is extremely low.
Can be directly driven by a CMOS device even at low voltage due to low
gate threshold voltage.
High-speed switching
Housed in an ultra-small package suitable for high density mounting
Absolute Maximum Ratings
(Ta
=
25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V
DS
20
V
Gate–source voltage
V
GSS
10
V
Drain current
I
D
100
mA
Drain power dissipation
P
D
(Note 1)
150
mW
Channel temperature
T
ch
150
°C
Storage temperature
T
stg
55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on an FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.135 mm
2
×
5)
Marking Equivalent Circuit
(top view)
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2P1B
Weight: 0.003 g (typ.)
0.3 mm
0
D A
5
4
1
2
3
5
4
1
2
3
Q1
Q2
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