參數(shù)資料
型號(hào): SSM4226GM
廠商: Silicon Storage Technology, Inc.
英文描述: DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
中文描述: 雙N溝道增強(qiáng)型功率MOSFET
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 142K
代理商: SSM4226GM
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SSM4226M/GM
f=1.0MHz
8/06/2004 Rev.1.02
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C
Ciss
Coss
Crss
0
4
8
12
16
0
10
20
30
40
50
Q
G
, Total Gate Charge (nC)
V
G
V
DS
=15V
V
DS
=20V
V
DS
=24V
I
D
=8A
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 135
/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
(V)
I
D
(
T
c
=25
o
C
Single Pulse
1s
1ms
10ms
100ms
DC
100us
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
V
GS
10%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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