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| 型號： | SSM1N45BTF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 中文描述： | 0.5 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SOT-223, 4 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 775K |
| 代理商： | SSM1N45BTF |
2004 Fairchild Semiconductor Corporation
S
M1N45B
Rev. A, May 2004
SSM1N45B
450V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic ballasts based on half bridge
configuration.
Features
0.5A, 450V, RDS(on) = 4.25 @VGS = 10 V
Low gate charge ( typical 6.5 nC)
Low Crss ( typical 6.5 pF)
100% avalanche tested
Improved dv/dt capability
Gate-Source Voltage
± 50V guaranteed
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
SSM1N45B
Units
VDSS
Drain-Source Voltage
450
V
ID
Drain Current
- Continuous (TC = 25°C)
0.5
A
- Continuous (TC = 100°C)
0.32
A
IDM
Drain Current
- Pulsed
(Note 1)
4.0
A
VGSS
Gate-Source Voltage
± 50
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
108
mJ
IAR
Avalanche Current
(Note 1)
0.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.25
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TA = 25°C)
0.9
W
Power Dissipation (TL = 25°C)
2.5
W
- Derate above 25°C
0.02
W/°C
TJ, Tstg
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 6b)
--
63
°C/W
●
▲
!
●
▲
!
S
D
G
SOT-223
SSM Series
G
D
S
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