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參數(shù)資料
| 型號： | SSM1N45B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 450V N-Channel MOSFET |
| 中文描述： | 0.5 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 639K |
| 代理商： | SSM1N45B |
Rev. A, May 2004
S
2004 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 75mH, I
= 1.6A, V
DD
= 50V, R
G
= 25
,
Starting T
= 25°C
3. I
≤
0.5A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
6. a) Reference point of the R
is the drain lead
b) When mounted on the minimum pad size recommended (PCB Mount)
(R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance. R
θ
CA
is determined by the user’s board design)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
450
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.5
--
V/°C
V
DS
= 450 V, V
GS
= 0 V
V
DS
= 360 V, T
C
= 125°C
V
GS
= 50 V, V
DS
= 0 V
V
GS
= -50 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
10
100
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250 mA
2.3
3.5
3.0
4.2
3.7
4.9
V
V
R
DS(on)
Static Drain-Source
On-Resistance
Forward Transconductance
V
GS
= 10 V, I
D
= 0.25 A
--
3.4
4.25
g
FS
V
DS
= 50 V, I
D
= 0.25 A
(Note 4)
--
0.7
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
185
29
6.5
240
40
8.5
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 225 V, I
D
= 0.5 A,
R
G
= 25
(Note 4,5)
--
--
--
--
--
--
--
7.5
21
23
36
6.5
0.9
3.2
25
50
55
80
8.5
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 360 V, I
D
= 0.5 A,
V
GS
= 10 V
(Note 4,5)
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
0.5
4.0
1.4
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= 0.5 A
V
GS
= 0 V, I
S
= 0.5 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
102
0.26
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