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參數(shù)資料
| 型號： | SSI2N80A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2A I(D) | TO-262AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 800V的五（巴西）直|甲（?。﹟對262AA |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 649K |
| 代理商： | SSI2N80A |
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
Ο
C
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
μ
A (Max.) @ V
DS
= 800V
Low R
DS(ON)
: 4.688
(Typ.)
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
Ο
C
)
Ο
C
)
Ο
C
)
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
Ο
C
A
Ο
C
O
1
O
3
O
O
1
2
O
1
SSW/I2N80A
BV
DSS
= 800 V
R
DS(on)
= 6.0
I
D
= 2 A
800
2
1.3
8
+
_
213
2
8
2.0
3.1
80
0.64
- 55 to +150
300
1.56
40
62.5
--
--
--
30
1999 Fairchild Semiconductor Corporation
Rev. B
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