- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382548 > SSI1N60B (FAIRCHILD SEMICONDUCTOR CORP) 600V N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | SSI1N60B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 1 A, 600 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 封裝： | I2PAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 607K |
| 代理商： | SSI1N60B |
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
S
SSW1N60B / SSI1N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
1.0A, 600V, R
DS(on)
= 12
@V
GS
= 10 V
Low gate charge ( typical 5.9 nC)
Low Crss ( typical 3.6 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
SSW1N60B / SSI1N60B
600
1.0
0.6
3.0
±
30
50
1.0
3.4
5.5
3.13
34
0.27
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
stg
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
!
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
3.67
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
!
!
!
!
!
!
"
!
S
!
!
!
#
D
G
D
2
-PAK
SSW Series
I
2
-PAK
SSI Series
G
S
D
G
S
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SSW1N60B | 600V N-Channel MOSFET |
| SSN1N45B | 450V N-Channel MOSFET |
| SSP3N80A | ACB 2C 2#16S SKT PLUG |
| SSP5N90 | Advanced Power MOSFET |
| SSP5N90A | Advanced Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSI1N60BTU | 功能描述:MOSFET 600V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSI201 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Phoneme Speech synthesizer |
| SSI202 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Phoneme Speech synthesizer |
| SSI203 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Phoneme Speech synthesizer |
| SSI204 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Phoneme Speech synthesizer |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。