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參數(shù)資料
| 型號(hào)： | SSF4N80AS |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.5A I(D) | TO-247VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 800V的五（巴西）直| 3.5AI（四）|對(duì)247VAR |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 255K |
| 代理商： | SSF4N80AS |
Advanced Power MOSFET
FEATURES
TO-3PF
1.Gate 2. Drain 3. Source
3
2
1
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
μ
A (Max.) @ V
DS
= 800V
Low R
DS(ON)
: 2.450
(Typ.)c
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
Ο
C
)
Ο
C
)
Ο
C
)
Characteristic
Value
800
3.5
2.2
18
30
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
Ο
C
A
Ο
C
O
1
O
3
O
O
1
2
O
1
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
θ
JC
R
θ
JA
Ο
C
/W
Characteristic
Max.
Units
Symbol
Typ.
SSF4N80AS
BV
DSS
= 800 V
R
DS(on)
= 3.0
I
D
= 3.5 A
327
3.5
8.5
2.0
85
0.68
- 55 to +150
300
1.47
40
--
--
1999 Fairchild Semiconductor Corporation
Rev. B
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