參數(shù)資料
型號: SSD2008A
英文描述: TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 30V V(BR)DSS | 3.5A I(D) | SO
中文描述: 晶體管| MOSFET的|一對|互補(bǔ)| 30V的五(巴西)直| 3.5AI(四)|蘇
文件頁數(shù): 1/8頁
文件大?。?/td> 301K
代理商: SSD2008A
SSD2008A
30
3.5
2.8
14.0
±
20
- 55 to +150
8 SOIC
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
4
3
1
2
5
6
8
7
Top View
N & P-Channel MOSFET
Dual P-CHANNEL POWER MOSFET
-30
-3.5
-2.8
-14.0
±
20
2.0
1.3
!
Lower R
DS(ON)
!
Improved Inductive Ruggedness
!
Fast Switching Times
!
Low Input Capacitance
!
Extended Safe Operating Area
!
Improved High Temperature Reliability
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current T
A
=25
Continuous Drain Current T
A
=70
Drain Current-Pulsed
Gate-to-Source Voltage
Total Power Dissipation ( T
A
=25
)
( T
A
=70
)
Operating and Junction Storage
Temperature Range
Characteristic
N-Channel
Units
V
Symbol
V
DSS
I
D
P
D
A
V
A
W
SSD2008
BV
DSS
30V
R
DS
(on)
0.05
I
D
N-Channel
3.5A
Product Summary
V
GS
I
DM
T
J
, T
STG
Thermal Resistance
Junction-to-Ambient
R
θ
JA
/W
Characteristic
Max.
Units
Symbol
Typ.
--
62.5
P-Channel
-30V
0.10
-3.5A
P-Channel
Rev. A1
D
1
G
1
S
1
D
1
G
2
D
2
S
2
D
2
相關(guān)PDF資料
PDF描述
SSD2011 TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 60V V(BR)DSS | 2A I(D) | SO
SSD2013 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 12V V(BR)DSS | 5A I(D) | SO
SSD2015 TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 12V V(BR)DSS | 3.8A I(D) | SO
SSD2019A TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DSS | 3.4A I(D) | SO
SSD2101 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7A I(D) | SO
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SSD2008ATF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSD2009 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-CHANNEL POWER MOSFET
SSD2009A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-CHANNEL POWER MOSFET
SSD2009ATF 功能描述:MOSFET N-Ch/50V/3a 0.13Ohm@VGS=10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSD2010TF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube