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參數(shù)資料
| 型號(hào)： | SS8550LT1 |
| 英文描述： | General purpose transistors |
| 中文描述： | 通用晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 133K |
| 代理商： | SS8550LT1 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SS8550LT1
TRANSISTOR
FEATURES
Power dissipation
P
CM
: 0.3 W
Collector current
I
CM
: -1.5 A
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
T
stg
: -55
PNP
Tamb=25
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= -100
A
I
E
=0
-40
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= -0.1mA
I
B
=0
-25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= -100
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
= -40 V , I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
= -20 V , I
B
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
= -5V , I
C
=0
-0.1
A
h
FE 1
V
CE
= -1V, I
C
= -100mA
120
350
DC current gain
h
FE 2
V
CE
= -1V, I
C
= -800mA
40
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-800 mA, I
B
= -80mA
-0.5
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-800 mA, I
B
= -80mA
-1.2
V
Transition frequency
f
T
V
CE
= -10V, I
C
= -50mA
f=
30MHz
100
MHz
CLASSIFICATION OF h
FE
(1)
DEVICE MARKING
SS8550LT1=Y2
Unit : mm
SOT
1. BASE
23
2. EMITTER
3. COLLECTOR
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SS8550LT1_09 | 制造商:WEITRON 制造商全稱(chēng):Weitron Technology 功能描述:PNP General Purpose Transistors |
| SS8550LT1-SOT-23 | 制造商:JIANGSU 制造商全稱(chēng):Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:TRANSISTOR（ PNP ） |
| SS8550T | 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:PNP Silicon General Purpose Transistor |
| SS8550W | 制造商:BILIN 制造商全稱(chēng):Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| SS-8562-04 | 制造商:MACROMATIC CONTROLS LLC 功能描述:Relay;E-Mech;Timing;Off Delay;SPDT;Cur-Rtg 5A;Ctrl-V 120AC;Vol-Rtg 120/28AC/DC |
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