參數(shù)資料
型號(hào)： SS8550LT1-SOT-23
廠商： 江蘇長(zhǎng)電科技股份有限公司
英文描述： TRANSISTOR（ PNP ）
中文描述： 晶體管（進(jìn)步黨）
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 118K
代理商： SS8550LT1-SOT-23
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SS8550LT1
TRANSISTOR
FEATURES
Power dissipation
P
CM
: 0.3 W
Collector current
I
CM
: -1.5 A
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
T
stg
: -55
PNP
Tamb=25
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= -100
A
I
E
=0
-40
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= -0.1mA
I
B
=0
-25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= -100
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
= -40 V , I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
= -20 V , I
B
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
= -5V , I
C
=0
-0.1
A
h
FE 1
V
CE
= -1V, I
C
= -100mA
120
350
DC current gain
h
FE 2
V
CE
= -1V, I
C
= -800mA
40
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-800 mA, I
B
= -80mA
-0.5
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-800 mA, I
B
= -80mA
-1.2
V
Transition frequency
f
T
V
CE
= -10V, I
C
= -50mA
f=
30MHz
100
MHz
CLASSIFICATION OF h
FE
(1)
DEVICE MARKING
SS8550LT1=Y2
Unit : mm
SOT
1. BASE
23
2. EMITTER
3. COLLECTOR
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