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參數(shù)資料
| 型號： | SS6P4C-M3/87A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 90K |
| 代理商： | SS6P4C-M3/87A |
Document Number: 89114
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 10-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Dual Common-Cathode Schottky Rectifier
SS6P4C
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, DC/DC converters and polarity protection
applications.
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency
Low thermal resistance
Meets MSL level 1, per J-STD-020
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 3.0 A
VRRM
40 V
IFSM
70 A
EAS
20 mJ
VF at IF = 3 A
0.53 V
TJ max.
150 °C
TO-277A (SMPC)
K
2
1
Anode 1
Anode 2
Cathode
K
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS6P4C
UNIT
Device marking code
S64C
Maximum repetitive peak reverse voltage
VRRM
40
V
Maximum average forward rectified current (fig. 1)
total devive
IF(AV)
6.0
A
per diode
3.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
70
A
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode
EAS
20
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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