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參數(shù)資料
| 型號： | SS3P3-HE3/85A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMP, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 353K |
| 代理商： | SS3P3-HE3/85A |
Vishay General Semiconductor
SS3P3
New Product
Document Number 88944
07-Feb-06
www.vishay.com
1
DO-220AA (SMP)
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency
Low thermal resistance
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
3 A
VRRM
30 V
IFSM
50 A
EAS
11.25 mJ
VF
0.43 V
Tj max.
150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
SS3P3
UNIT
Device marking code
33
Maximum repetitive peak reverse voltage
VRRM
30
V
Maximum average forward rectified current (see Fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
50
A
Non-repetitive avalanche energy at 25 °C, IAS = 1.5 A, L = 10 mH
EAS
11.25
mJ
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP
MAX.
UNIT
Maximum instantaneous
forward voltage (1)
at IF = 3 A,
TJ = 25 °C
TJ = 125 °C
VF
0.52
0.43
0.58
0.48
V
Maximum reverse current at
rated VR
(1)
TJ = 25 °C
TJ = 125 °C
IR
-
9.0
200
20
A
mA
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
130
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SS3P3HM3/84A | 功能描述:肖特基二極管與整流器 30volt 3.0amp RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SS3P3HM3/85A | 功能描述:肖特基二極管與整流器 30volt 3.0amp RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SS3P3HM3-84A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers |
| SS3P3HM3-85A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers |
| SS3P3L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers |
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