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參數(shù)資料
| 型號： | SS3H9-HE3/57T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 90K |
| 代理商： | SS3H9-HE3/57T |
New Product
SS3H9 & SS3H10
Vishay General Semiconductor
Document Number: 88752
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High-Voltage Surface Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
Low leakage current
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
MECHANICAL DATA
Case: DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
90 V, 100 V
IFSM
100 A
VF
0.65 V
IR
20 A
TJ max.
175 °C
DO-214AB (SMC)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS3H9
SS3H10
UNIT
Device marking code
MS9
MS10
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at: TL = 115 °C
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Peak repetitive reverse surge current at tp = 2.0 s, 1 kHz
IRRM
1.0
A
Critical rate of rise of reverse voltage
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SS3H9HE3-57T | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High-Voltage Surface Mount Schottky Rectifier |
| SS3H9HE3A/H | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High-Voltage Surface Mount Schottky Rectifier |
| SS3H9HE3A/I | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High-Voltage Surface Mount Schottky Rectifier |
| SS3J | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SURFACE MOUNT SUPER FAST RECTIFIERS |
| SS3K | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SURFACE MOUNT SUPER FAST RECTIFIERS |
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