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參數(shù)資料
| 型號(hào)： | SS32 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封裝： | PLASTIC, SMC, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 361K |
| 代理商： | SS32 |
SS32 thru SS36
Document Number 88751
11-Jan-06
Vishay General Semiconductor
www.vishay.com
1
DO-214AB (SMC)
Surface Mount Schottky Barrier Rectifier
Major Ratings and Characteristics
IF(AV)
3.0 A
VRRM
20 V to 60 V
IFSM
100 A
EAS
20 mJ
VF
0.5 V, 0.75 V
Tj max.
125 °C, 150 °C
Features
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications
Mechanical Data
Case: DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
Maximum Ratings
(TA = 25 °C unless otherwise specified)
Parameter
Symbol
SS32
SS33
SS34
SS35
SS36
Unit
Device marking code
S2
S3
S4
S5
S6
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current
at TL (see Fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Non-repetitive avalanche energy at TA = 25 °C,
IAS = 2.0 A, L = 10 mH
EAS
20
mJ
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 55 to + 125
- 55 to + 150
°C
Storage temperature range
TSTG
- 55 to + 150
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SS35-HE3 | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SS32-E3 | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SS3H9 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SS3H9 | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SS3H10-HE3 | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SS3-2 | 制造商:WM BERG 功能描述: |
| SS32 R6 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 20V 3A 2-Pin SMC T/R |
| SS32 R7 | 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 20V 3A 2-Pin SMC T/R |
| SS32 | 制造商:Fairchild Semiconductor Corporation 功能描述:Schottky Rectifier |
| SS-32.768K-12.5P | 制造商:Mercury Electronics (MEC) 功能描述:CRYSTAL, 32.768 MHZ, 12.5 PF, SMD |
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