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參數(shù)資料
| 型號： | SS22-E3/5BT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 335K |
| 代理商： | SS22-E3/5BT |
SS22 thru SS26
Vishay General Semiconductor
Document Number: 88748
Revision: 23-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Schottky Barrier Rectifier
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
20 V to 60 V
IFSM
75 A
VF
0.50 V, 0.70 V
TJ max.
125 °C, 150 °C
DO-214AA (SMB)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS22
SS23
SS24
SS25
SS26
UNIT
Device marking code
S2
S3
S4
S5
S6
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Max. average forward rectified current at TL (Fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
75
A
Non-repetitive avalanche energy at TA = 25 °C,
IAS = 2.0 A, L = 10 mH
EAS
20
mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Ω
VC
8.0
KV
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
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