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參數(shù)資料
| 型號(hào)： | SS1H9-M3/5AT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 90 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | SS1H9-M3/5AT |
Document Number: 89411
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Surface Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
SS1H9, SS1H10
Vishay General Semiconductor
New Product
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low powevr losses, high efficiency
Low forward voltage drop
Low leakage current
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
90 V to 100 V
IFSM
50 A
VF
0.62 V
IR
1.0 μA
TJ max.
175 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS1H9
SS1H10
UNIT
Device marking code
S9
S10
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
IRRM
1.0
A
Storage temperature range
TSTG
- 65 to + 175
°C
Maximum operating temperature
TJ
175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SS1H10-M3/61T | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| SS1P3L-E3 | 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS1P4L-E3 | 1.5 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS1P3L-HE3 | 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS1P4L-HE3 | 1.5 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA |
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參數(shù)描述 |
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