參數(shù)資料
型號(hào): SS12P3L-G3/86A
廠商: VISHAY SEMICONDUCTORS
元件分類(lèi): 參考電壓二極管
英文描述: 12 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A
封裝: GREEN, PLASTIC, SMPC, 3 PIN
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 106K
代理商: SS12P3L-G3/86A
New Product
SS12P2L & SS12P3L
Vishay General Semiconductor
Document Number: 89002
Revision: 30-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
Figure 3. Typical Instantaneous Forward Characteristics
10
12
14
8
6
4
2
0
100
110
120
130
140
150
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Lead Temperature (°C)
Resistive or Inductive Load
T
L measured
at the Cathode Band Terminal
0
1
2
3
4
5
6
7
024
6
8
10
12
14
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
D = t
p/T
t
p
T
0.01
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.7
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
0.6
Figure 4. Typical Reverse Leakage Characteristics
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0.001
0.1
1
10
100
1000
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
T
A = 125 °C
T
A = 25 °C
0.01
T
A = 150 °C
100
1000
10 000
0.1
1
10
100
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Junction to Ambient
0.01
0.1
1
10
100
1
10
100
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
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