參數(shù)資料
型號(hào): SS12
廠商: 樂山無線電股份有限公司
英文描述: 1A SCHOTTKY SMA DIODES
中文描述: 形狀記憶合金第1A肖特基二極管
文件頁數(shù): 2/2頁
文件大?。?/td> 68K
代理商: SS12
LESHAN RADIO COMPANY, LTD.
52A–2/2
SS12 – SS16
1A
RATING & CHARACTERISTIC CURVES OF 1A SCHOTTKY SMA DIODES
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
AMBIENT TEMPER ATURE, (C)
+0.5A
0
-0.25A
-1.0A
SET TIME
Trr
NOTES:1.Rise Time=7ns max.
Input Impedance=1megohm.22pF.
2.Rise Time=10ns max.
Source Impedance=50 ohms.
(+)
PULSE
GENERAT O R
(NOTE 2)
(-)
D.U.T.
OSCILLOSCOPE
(NOTE 1)
1
NON.
INDUCTIVE
(+)
25Vdc
(APPROX)
(-)
50
10
NONINDUCTIVE
FIG.1-TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
BASE FOR 10 ns/cm
A
VERAGE
FOR
W
ARD
CURRENT
,(A)
FIG. 3 - TYPICAL REVERSE
CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
70
90
110
130
150
170
1.0
0.5
0
Resistive or
Inductive Load
0
20
40
60
80
100
10
1.0
0.1
0.01
0.001
TJ =125C
TJ =75 C
TJ =25 C
AT RATED T L
8.3ms Single Half Sine-Wave
(JEDEC Method)
50
40
30
20
10
0
400
100
10
.2
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
10.0
1.0
.1
.01
.001
TJ =25C
Pulse Width=300
s
1% Duty Cycle
1
2
4
6
8 10
20
40
60 80 100
.1
.2
.4
1.0
2
4
10
20
40
100
TJ = 25C
f = 1.0MHz
Vsig = 50mV
p-p
INST
ANT
ANEOUS
REVERSE
CURRENT
(
A)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - MAXINUM NON-REPETITIVE
FOWARD SURGE CURRENT
JUNCTION
CAP
ACIT
ANCE,(pF)
REVERSE VOLTAGE,(V)
PEAK
FOR
W
ARD
SURGE
CURRENT
,(A)
NUMBER OF CYCLES AT 60Hz
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
,(A)
INSTANTANEOUS FORWARD VOLTAGE,(V)
1cm
–––– SS12 ~ SS14
- - - -SS15 & SS16
–––– SS12 ~ SS14
- - - -SS15 & SS16
TJ =150C
TJ =125C
–––– SS12 ~ SS14
- - - -SS15 & SS16
–––– SS12 ~ SS14
- - - -SS15 & SS16
相關(guān)PDF資料
PDF描述
SS13 1A SCHOTTKY SMA DIODES
SS14 1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AC
SS15 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
SS2060LHET/R7 2 A, 60 V, SILICON, RECTIFIER DIODE
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