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參數(shù)資料
| 型號： | SS1030T/R13 |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 189K |
| 代理商： | SS1030T/R13 |
052-6251
Rev
C
4-2002
APT30GT60BRD
C,
CAPACITANCE
(pF)
I C
,COLLECTOR
CURRENT
(AMPERES)
I C
,COLLECTOR
CURRENT
(AMPERES)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(VOLTS)
,COLLECTOR
CURRENT
(AMPERES)
I C
,COLLECTOR
CURRENT
(AMPERES)
60
50
40
30
20
10
0
60
50
40
30
20
10
0
3,000
1,000
500
100
50
10
TC =+25°C
TJ =+150°C
SINGLE PULSE
IC = IC2
TJ = +25°C
f = 1MHz
Cies
Cres
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.05
D=0.5
0.2
0.1
0.02
0.01
SINGLE PULSE
Coes
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
OPERATION
LIMITED
BY
VCE (SAT)
60
50
40
30
20
10
0
200
100
50
10
5
1
20
16
12
8
4
0
6V
8V
7V
VGE=15, 10 & 9V
7V
6V
8V
5V
VGE=15, 10 & 9V
250Sec. Pulse Test
VGE = 15V
TC=-55°C
TC=+25°C
TC=+150°C
VCE=480V
VCE=300V
VCE=120V
IC = IC2
TJ = +25°C
5V
0
4
8
12
16
20
0
4
8
12
16
20
0
1
2
3
4
1
5
10
50 100
600
0.01
0.1
1.0
10
50
0
40
80
120
160
200
10-5
10-4
10-3
10-2
10-1
1.0
10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C)
Figure 2, Typical Output Characteristics (TJ = 150°C)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics
Figure 4, Typical Output Characteristics @ VGE = 15V
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
100s
1ms
10ms
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