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參數(shù)資料
| 型號： | SS100 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 1.0 Ampere Schottky Barrier Rectifiers(1.0安培肖特基勢壘整流器（重復(fù)峰值反向電壓：100V）) |
| 中文描述： | 一點〇安培肖特基（1.0安培肖特基勢壘整流器（重復(fù)峰值反向電壓：100V的）） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 37K |
| 代理商： | SS100 |
S
SS12-S100, Rev. A
SS12 - S100
1.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
1998 Fairchild Semiconductor Corporation
Features
Glass passivated junctions.
High current capability, low V
F
.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
.375 " lead length @ T
A
= 75
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient **
Storage Temperature Range
Operating Junction Temperature
1.0
A
i
f(surge)
40
A
P
D
1.1
11
88
W
mW/
°
C
°
C/W
°
C
°
C
R
θ
JA
T
stg
T
J
-65 to +150
-65 to +125
Parameter
Device
Units
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
18
80
56
80
19
90
64
90
100
100
71
100
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
V
DC Reverse Voltage (Rated V
R
)
Maximum Reverse Current T
A
= 25
°
C
(Note 1)
@ rated V
R
Maximum Forward Voltage @ 1.0 A
T
A
= 100
°
C
0.2
10
700
mA
mA
mV
500
850
Note:
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
2
1
0.208 (5.283)
0.188 (4.775)
0.181 (4.597)
0.157 (3.988)
0.096 (2.438)
0.078 (1.981)
0.062 (1.575)
0.055 (1.397)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
0.060 (1.524)
0.030 (0.762)
0.114 (2.896)
0.098 (2.489)
Discrete POWE R & Signal
Technologies
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