
June 2000 Rev. 5 - ECO #12895
1
PCMCIA Flash Memory Card
SRA Series
PC Card Products
Features
High Performance SRAM memory Card
Single 5 Volt Supply
- (3.3V/5V operation is available as an option)
Fast Access times: 150ns
x8/x16 PCMCIA standard interface
Low Power CMOS technology provides very low
power and reliable data retention characteristics
- standby current < 100μA typical
Rechargeable Lithium battery with recharge circuitry
- eliminates the need for replaceable batteries
- standby current during recharge typically < 2mA
- battery backup time
7 months
- type I card
18 months - type II card
typical based on 4MB (lower densities will
have greater storage times)
Unlimited write cycles, no endurance issues
Optional Features:
2KB EEPROM attribute memory containing
CIS
Optional Hardware Write Protect switch
PC Card Standard Type I or Type II Form Factor
The WEDC SRAM Series (SRA) memory cards offer a
high performance nonvolatile storage solution for code
and data storage, disk caching, and write intensive
mobile and embedded applications.
Packaged in PCMCIA type I or type II housing (type II
for cards with extended battery backup time), the
WEDC SRAM SRA series is based on 1 or 4Mbit
SRAM
memories, providing densities from 256
Kilobytes to 8 Megabytes.
The SRA series of SRAM memory cards requires a 5V
power supply and operates at speeds to 150ns. The
cards are based on advanced CMOS technology
providing very low power and reliable data retention
characteristics. WEDC’s SRAM cards contain a
rechargeable lithium battery and recharge circuitry,
eliminating the need for replaceable batteries found in
many SRAM cards.
WEDC’s standard cards are shipped with WEDC’s
SRAM Logo. Cards are also available with blank
housings (no Logo). The blank housings are available
in both a recessed (for label) and flat housing. Please
contact WEDC sales representative for further
information on Custom artwork.
SRAM Memory Card 256KB through 8MB
General Description
Block Diagram
4MB SRAM Card Shown
+
decoder
address
[A1..A19]
/CSLi
/CSHi
/CSHi
[DO..D7]
[D8..D15]
Write Prot
S1
WP
Vcc
[A20..A22]
ATTRIBUTE
CA0
+ + +
/CS-A
/RD
CTRL
//RD
/WR
/RD
CTRL
Power Management
Lithium Bat.
to internal
Vcc
BVD1
GND
VS1
VS2
[D8..D15]
[DO..D7]
I/O BUFFER
SRAM
512K x 8
[A1..A11]
NC
NC
+
2. pull up resistor (min 10k)
Notes:
1. pull down resistor (min 100k)
+
+
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8