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參數(shù)資料
| 型號： | SPU04N60S5 |
| 廠商： | SIEMENS AG |
| 英文描述： | Cool MOS Power Transistor(COOL MOS型功率晶體管) |
| 中文描述： | 酷MOS功率晶體管（酷馬鞍山型功率晶體管） |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 146K |
| 代理商： | SPU04N60S5 |
Semiconductor Group
01 / 1999
4
SPU04N60S5
SPD04N60S5
Preliminary data
Electrical Characteristics
Parameter
Symbol
Values
typ.
Unit
at T
= 25 °C, unless otherwise specified
Gate Charge Characteristics
Gate-source charge
I
D
= 4.5 A,
V
DD
= 350 V
Gate-drain charge
I
D
= 4.5 A,
V
DD
= 350 V
Total gate charge
V
DD
= 350 V,
I
D
= 4.5 A,
V
GS
= 0 to 10 V
min.
max.
Q
gs
-
4.1
-
nC
Q
gd
-
9.2
-
Q
g
-
17
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 4.5 A
Reverse recovery time
V
R
= 350 V,
I
F
=
I
S
,
di
F
/dt
= 100 A/μs
Reverse recovery charge
V
R
= 350 V,
I
F=
l
S
,
di
F
/dt
= 100 A/μs
I
S
-
-
4.5
A
I
SM
-
-
7.7
V
SD
-
1
1.2
V
t
rr
-
900
-
ns
Q
rr
-
3.2
-
μC
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