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參數(shù)資料
| 型號(hào)： | SPP9435S8TG |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 225K |
| 代理商： | SPP9435S8TG |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unles
℃
s otherwise noted)
2006/08/17
Ver.3
Page 3
SPP9435
P-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
V
DS
=0V,V
GS
=±20V
V
DS
=-24V,V
GS
=0V
I
DSS
V
DS
=-24V,V
GS
=0V
T
J
=85
℃
I
D(on)
V
DS
= -5V,V
GS
=-4.5V
V
GS
=-10V,I
D
=-5.7A
V
GS
=-6.0V,I
D
=-5.0A
R
DS(on)
V
GS
=-4.5V,I
D
=-4.4A
gfs
V
DS
=-15V,I
D
=-5.7A
V
SD
I
S
=-2.3A,V
GS
=0V
-30
-1.0
-3.0
±100
-1
V
nA
Zero Gate Voltage Drain Current
-5
uA
On-State Drain Current
-10
A
0.048
0.054
0.058
13
-0.8
0.060
0.070
0.080
-1.2
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Q
g
16
24
Gate-Source Charge
Q
gs
2.3
Gate-Drain Charge
Q
gd
V
DS
=-15V,V
GS
=-10V
I
D
= -3.5A
4.5
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
680
120
75
V
DS
=-15V,V
GS
=0V
f=1MHz
pF
t
d(on)
14
25
Turn-On Time
t
r
15
26
t
d(off)
42
70
Turn-Off Time
t
f
V
DD
=-15V,R
L
=15
I
D
≡
-1.0A,V
GEN
=-10V
R
G
=6
30
50
nS
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