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參數(shù)資料
| 型號： | SPP3481ST6RG |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 226K |
| 代理商： | SPP3481ST6RG |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unle
℃
ss otherwise noted)
2007/03/19
Ver.1
Page 3
SPP3481
P-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
V
DS
=0V,V
GS
=±20V
V
DS
=-24V,V
GS
=0V
I
DSS
V
DS
=-24V,V
GS
=0V
T
J
=55
℃
-30
-1.0
-3.0
±100
-1
V
nA
Zero Gate Voltage Drain Current
-10
uA
On-State Drain Current
I
D(on)
V
DS
≦
-5V,V
GS
=-10V
-10
A
V
GS
=- 10V,I
D
=-5.2A
V
GS
=-4.5V,I
D
=-4.2A
V
DS
=-5.0V,I
D
=-4.0A
I
S
=-1.0A,V
GS
=0V
0.042
0.058
10
-0.8
0.055
0.075
-1.2
Drain-Source On-Resistance
R
DS(on)
Forward Transconductance
Diode Forward Voltage
gfs
V
SD
S
V
Dynamic
Total Gate Charge
Q
g
14
21
Gate-Source Charge
Q
gs
1.9
Gate-Drain Charge
Q
gd
V
DS
=-15V,V
GS
=-10V
I
D
≡
-4.0A
3.7
nC
Input Capacitance
C
iss
540
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
131
105
V
DS
=-15V,V
GS
=0V
f=1MHz
pF
t
d(on)
10
15
Turn-On Time
t
r
15
25
t
d(off)
31
50
Turn-Off Time
t
f
V
DD
=-15V,R
L
=15
I
D
≡
-1.0A,V
GEN
=-10V
R
G
=6
20
30
ns
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