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參數(shù)資料
| 型號： | SPP2341S23RG |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強型MOS管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 212K |
| 代理商： | SPP2341S23RG |
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
2007/06/25
Ver.2
Page 3
SPP2341
P-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=-20V,V
GS
=0V
I
DSS
V
DS
=-20V,V
GS
=0V
T
J
=55
℃
-20
-0.35
-0.9
±100
-1
V
nA
Zero Gate Voltage Drain Current
-10
uA
On-State Drain Current
I
D(on)
V
DS
≦
-5V,V
GS
=-4.5V
-6
A
V
GS
=- 4.5V,I
D
=-3.3A
V
GS
=- 2.5V,I
D
=-2.8A
V
GS
=- 1.8V,I
D
=-2.3A
V
DS
=-5.0V,I
D
=-3.3A
I
S
=-1.6A,V
GS
=0V
0.036
0.045
0.055
3
-0.8
0.045
0.055
0.065
-1.2
Drain-Source On-Resistance
R
DS(on)
Forward Transconductance
Diode Forward Voltage
gfs
V
SD
S
V
Dynamic
Total Gate Charge
Q
g
8
13
Gate-Source Charge
Q
gs
1.2
Gate-Drain Charge
Q
gd
V
DS
=-6V,V
GS
=-4.5V
I
D
≡
-3.3A
2.2
nC
Input Capacitance
C
iss
700
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
160
120
V
DS
=-6V,V
GS
=0V
f=1MHz
pF
t
d(on)
15
25
Turn-On Time
t
r
35
55
t
d(off)
60
90
Turn-Off Time
t
f
V
DD
=-6V,R
L
=6
I
D
≡
-1.0A,V
GEN
=-4.5V
R
G
=6
40
60
ns
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