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參數(shù)資料
| 型號： | SPP2303S23RG |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強型MOS管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 211K |
| 代理商： | SPP2303S23RG |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Un
℃
less otherwise noted)
2007/02/20
Ver.5
Page 3
SPP2303
P-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=-10uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
V
DS
=0V,V
GS
=±20V
V
DS
=-30V,V
GS
=0V
I
DSS
V
DS
=-30V,V
GS
=0V
T
J
=55
℃
-30
-1.0
-3.0
±100
-1
V
nA
Zero Gate Voltage Drain Current
-10
uA
On-State Drain Current
I
D(on)
V
DS
≦
-5V,V
GS
=-10V
-6
A
V
GS
=- 10V,I
D
=-2.6A
V
GS
=-4.5V,I
D
=-2.0A
V
DS
=-10V,I
D
=-1.7A
I
S
=-1.25A,V
GS
=0V
0.095
0.125
2.4
-0.8
0.130
0.180
-1.2
Drain-Source On-Resistance
R
DS(on)
Forward Transconductance
Diode Forward Voltage
gfs
V
SD
S
V
Dynamic
Total Gate Charge
Q
g
5.8
10
Gate-Source Charge
Q
gs
0.8
Gate-Drain Charge
Q
gd
V
DS
=-15V,V
GS
=-10V
I
D
≡
-1.7A
1.5
nC
Input Capacitance
C
iss
226
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
87
19
V
DS
=-15V,V
GS
=0V
f=1MHz
pF
t
d(on)
9
20
Turn-On Time
t
r
9
20
t
d(off)
18
35
Turn-Off Time
t
f
V
DD
=-15V,R
L
=15
I
D
≡
-1.0A,V
GEN
=-10V
R
G
=6
6
20
ns
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| SPP2305 | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:P-Channel Enhancement Mode MOSFET |
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