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參數(shù)資料
| 型號(hào)： | SPP2095T252RG |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 210K |
| 代理商： | SPP2095T252RG |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless oth
℃
2006/03/16
Ver.2
Page 3
SPP2095
P-Channel Enhancement Mode MOSFET
erwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=-20V,V
GS
=0V
I
DSS
V
DS
=-20V,V
GS
=0V
T
J
=55
℃
V
GS
=-4.5V,I
D
=-6.0A
V
GS
=-2.5V,I
D
=-3.6A
R
DS(on)
V
GS
=-1.8V,I
D
=-2.0A
gfs
V
DS
=-5V,I
D
=-2.8A
V
SD
I
S
=-6A,V
GS
=0V
-20
-0.32
-0.8
±100
-1
V
nA
Zero Gate Voltage Drain Current
-5
uA
0.055
0.072
0.092
6
-0.8
0.065
0.085
0.105
-1.2
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Q
g
4.8
8
Gate-Source Charge
Q
gs
1.0
Gate-Drain Charge
Q
gd
V
DS
=-10V,V
GS
=-4.5V
I
D
≡
-8.0A
1.0
nC
Input Capacitance
C
iss
485
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
85
40
V
DS
=-10V,V
GS
=0V
f=1MHz
pF
t
d(on)
10
16
Turn-On Time
t
r
13
23
t
d(off)
18
25
Turn-Off Time
t
f
V
DD
=-10V,R
L
=6
I
D
≡
-1.0A,V
GEN
=-4.5V
R
G
=6
15
20
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SPP2095T252RGB | 制造商:SYNC-POWER 制造商全稱(chēng):SYNC-POWER 功能描述:P-Channel Enhancement Mode MOSFET |
| SPP20N60C2 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Cool MOS⑩ Power Transistor |
| SPP20N60C3 | 功能描述:MOSFET COOL MOS N-CH 650V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPP20N60C3 HF | 制造商:Infineon Technologies AG 功能描述:INFINEON.PG-TO220-3.TUBE.SPQ 500.MOQ 500/MPQ 500.TRANSISTOR |
| SPP20N60C3 | 制造商:Infineon Technologies AG 功能描述:MOSFET COOLMOS N TO-220 |
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