參數(shù)資料
型號(hào): SPP1013
英文描述: P-Channel Enhancement Mode MOSFET
中文描述: P溝道增強(qiáng)型MOS管
文件頁數(shù): 3/8頁
文件大小: 213K
代理商: SPP1013
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless otherwise noted)
2007/01/ 02
Ver.2
Page 3
SPP1013
P-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=-20V,V
GS
=0V
I
DSS
V
DS
=-20V,V
GS
=0V
T
J
=55
I
D(on)
V
DS
-4.5V,V
GS
=-5V
V
GS
=-4.5V,I
D
=-0.45A
V
GS
=-2.5V,I
D
=-0.35A
R
DS(on)
V
GS
=-1.8V,I
D
=-0.25A
gfs
V
DS
=-10V,I
D
=-0.25A
V
SD
I
S
=-0.15A,V
GS
=0V
-20
-0.35
-0.8
±100
-1
V
nA
Zero Gate Voltage Drain Current
-5
uA
On-State Drain Current
-0.7
A
0.42
0.58
0.75
0.4
-0.8
0.52
0.70
0.95
-1.2
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Q
g
1.5
2.0
Gate-Source Charge
Q
gs
0.3
Gate-Drain Charge
Q
gd
V
DS
=-10V,V
GS
=-4.5V ,I
D
-0.6A
0.35
nC
t
d(on)
5
10
Turn-On Time
t
r
15
25
t
d(off)
8
15
Turn-Off Time
t
f
V
DD
=-10V,R
L
=10
,
I
D
-0.4A
V
GEN
=-4.5V ,R
G
=6
1.4
1.8
ns
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