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參數(shù)資料
| 型號(hào)： | SPN8822TS8RG |
| 英文描述： | Common-Drain Dual N-Channel Enhancement Mode MOSFET |
| 中文描述： | 常見(jiàn)的漏雙N溝道增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 251K |
| 代理商： | SPN8822TS8RG |
Enhancement Mode MOSFET
PIN DESCRIPTION
2007/04/23
Ver.1
Page 2
SPN8822
Common-Drain Dual N-Channel
Pin
1
2
3
4
5
6
7
8
Symbol
D1 / D2
S1
S1
G1
G2
S2
S2
D1 / D2
Description
Drain
Source
Source
Gate
Gate
Source
Source
Drain
ORDERING INFORMATION
Part Number
Package
Part Marking
SPN8822TS8RG
TSSOP- 8P
8822
SPN8822TS8TG
TSSOP- 8P
8822
※
SPN8822TS8RG : 13” Tape Reel ; Pb – Free
※
SPN8822TS8TG : Tube ; Pb – Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
Unless otherwise noted)
℃
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
V
DSS
20
V
Gate –Source Voltage
V
GSS
±12
V
T
A
=25
℃
T
A
=70
℃
7.4
6.0
Continuous Drain Current(T
J
=150
)
℃
I
D
A
Pulsed Drain Current
I
DM
30
A
Continuous Source Current(Diode Conduction)
I
S
2.3
A
T
A
=25
℃
T
A
=70
℃
1.5
0.9
Power Dissipation
P
D
W
Operating Junction Temperature
T
J
-55/150
℃
Storage Temperature Range
T
STG
-55/150
80
℃
℃
/W
Thermal Resistance-Junction to Ambient
R
θ
JA
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